000			04261naaaa2200877uu 4500
003			BUT
005			20230331123953.0
006			m o d
007			cr|mn|---annan
008			20220321s2022 xx |||||o ||| eng|u d
020			_a9783036530123
020			_a9783036530130
040			_aoapen _coapen
041	0		_aeng
080			_a004
100	1		_aZambelli, Cristian _4edt
245	1	0	_aFlash Memory Devices
260			_aBasel _bMDPI - Multidisciplinary Digital Publishing Institute _c2022
300			_a1 electronic resource (144 p.)
506	0		_aOpen Access _2star _fUnrestricted online access
520			_aFlash memory devices have represented a breakthrough in storage since their inception in the mid-1980s, and innovation is still ongoing. The peculiarity of such technology is an inherent flexibility in terms of performance and integration density according to the architecture devised for integration. The NOR Flash technology is still the workhorse of many code storage applications in the embedded world, ranging from microcontrollers for automotive environment to IoT smart devices. Their usage is also forecasted to be fundamental in emerging AI edge scenario. On the contrary, when massive data storage is required, NAND Flash memories are necessary to have in a system. You can find NAND Flash in USB sticks, cards, but most of all in Solid-State Drives (SSDs). Since SSDs are extremely demanding in terms of storage capacity, they fueled a new wave of innovation, namely the 3D architecture. Today “3D” means that multiple layers of memory cells are manufactured within the same piece of silicon, easily reaching a terabit capacity. So far, Flash architectures have always been based on "floating gate," where the information is stored by injecting electrons in a piece of polysilicon surrounded by oxide. On the contrary, emerging concepts are based on "charge trap" cells. In summary, flash memory devices represent the largest landscape of storage devices, and we expect more advancements in the coming years. This will require a lot of innovation in process technology, materials, circuit design, flash management algorithms, Error Correction Code and, finally, system co-design for new applications such as AI and security enforcement.
540			_aCreative Commons _fhttps://creativecommons.org/licenses/by/4.0/ _2cc
546			_aEnglish
650		0	_aКомпьютерные устройства _94536
653			_aretention characteristic
653			_ahigh-κ
653			_anonvolatile charge-trapping memory
653			_astack engineering
653			_aNOR flash memory
653			_aaluminum oxide
653			_aNAND flash memory
653			_ainterference
653			_aTechnology Computer Aided Design (TCAD) simulation
653			_adisturbance
653			_aprogram
653			_anon-volatile memory (NVM)
653			_a3D NAND Flash memories
653			_arandom telegraph noise
653			_aFlash memory reliability
653			_atest platform
653			_aendurance
653			_asupport vector machine
653			_araw bit error
653			_a3D NAND Flash
653			_aRBER
653			_areliability
653			_aflash signal processing
653			_arandomization scheme
653			_asolid-state drives
653			_a3D flash memory
653			_aperformance cliff
653			_atail latency
653			_agarbage collection
653			_aartificial neural network
653			_aerror correction code
653			_awork function
653			_aeffective work function
653			_adipole
653			_ametal gate
653			_ahigh-k
653			_aSiO2
653			_ainterfacial reaction
653			_aMHONOS
653			_aerase performance
653			_a3D NAND flash memory
653			_atemperature
653			_aread disturb
653			_an/a
700	1		_aMicheloni, Rino _4edt
700	1		_aZambelli, Cristian _4oth
700	1		_aMicheloni, Rino _4oth
856	4	0	_awww.oapen.org _uhttps://mdpi.com/books/pdfview/book/4961 _70 _zDownload
856	4	0	_awww.oapen.org _uhttps://directory.doabooks.org/handle/20.500.12854/79581 _70 _zDescription
909			_c4 _dDarya Shvetsova
942			_2udc _cEE
999			_c6283 _d6283